Planarization for integrated circuits

ABSTRACT

A method of planarizing a layer of an integrated circuit. In one embodiment, a liquid film is applied over the layer, using extrusion coating techniques. In another embodiment, the layer itself may be applied as a liquid film, using extrusion techniques.

RELATED APPLICATION

This application is a continuation-in-part application of applicationSer. No. 10/113,008 filed Mar. 29, 2002 and entitled, “Via Formation inIntegrated Circuits By Use of Sacrificial Structures”.

TECHNICAL FIELD OF THE INVENTION

This invention relates to fabrication of integrated circuits, and moreparticularly to a method for planarizing surfaces of integrated circuitlayers.

BACKGROUND OF THE INVENTION

A typical digital integrated circuit comprises a number of transistorsand other electrical elements. The integrated circuit chip is asandwiched structure made up of the silicon substrate, dielectriclayers, metal interconnects, devices and so on. The layers are formed byvarious deposition, photolithographic, and etching techniques.

Advances in integrated circuit capacity and complexity depend onincreases in the density of semiconductor devices and layering of metalcircuitry. Each layer must be planarized prior to the next lithographystep to achieve desired device performance. Deposition means such aschemical vapor deposition or spin coating are conformal, which requiresthem to be subsequently planarized.

To ensure flatness, manufacturers typically use chemical mechanicalplanarization (CMP), which is essentially a chemical polishing process.Another approach to planarization is contact planarization, whichinvolves the application of a malleable coating on the surface of achip; the coating then is pressed against an optically clear, flatsurface and cured with ultraviolet light. The coating may be left inplace or removed, leaving the flat substrate.

SUMMARY OF THE INVENTION

One aspect of the invention is a method of planarizing a layer of anintegrated circuit. A liquid film is applied over the layer, usingextrusion coating techniques. In another embodiment, the layer itselfmay be applied as a liquid film, using extrusion coating techniques.

An advantage of the invention is that the extrusion coating is“self-planarizing”. No subsequent planarization steps are needed. As aresult, clean-up steps are eliminated and defects are reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates the formation of pillar-like structures over a metallead of an integrated circuit.

FIG. 2 illustrates the application of an insulating layer over thepillar-like structure.

FIG. 3 illustrates the removal of a portion of the insulating layer toexpose the top of the pillar-like structure.

FIG. 4 illustrates removal of the pillar-like structure.

DETAILED DESCRIPTION OF THE INVENTION

The following description is directed to a method of planarizing one ormore layers of an integrated circuit. For purposes of example, theplanarization is performed for an insulating layer, through which thereis a via. In the example below, the layer in question is applied usingextrusion techniques. In other embodiments, a layer of another materialcould be planarized by applying an extrusion coating on the surface ofthat layer.

“Extrusion” coating is meant here in its conventional sense. Theextruder is mounted above the substrate, and liquid is forced through adie onto the substrate. In the extrusion coating of a hot melt liquid,the liquid is fed into an extruder, and pumped to the substrate.Alternatively, granules of solid form of the liquid are fed into anextruder, where they are melted and homogenised before being pumpedthrough the die. Typically, then, the coating is a hot melt liquidapplied at an elevated temperature. The extruder is motion relative tothe substrate, thinner coatings can be produced where the line speed isfaster than the speed of the extrusion.

FIG. 1 illustrates the formation of a pillar 21 over a metal line 22,which has already been patterned on a semiconductor substrate 23. Pillar21 may be formed from photoresist, using conventional lithographictechniques, including patterning and etching. The material used to formpillar 21 is typically photoresist, but may be any “sacrificial”material, that may subsequently be removed as explained below. Pillar 21need not be column-shaped, but rather may be any structure having ashape such that when sacrificially removed, will form a via.

FIG. 2 illustrates the application of an insulating layer 31. Asillustrated, insulating layer 31 encapsulates pillar 21. Insulatinglayer 31 may be any material suitable for an interlevel dielectric layerof an integrated circuit.

Extrusion coating is especially desirable for applying layer 31 becauseof its ability to provide a planarized surface. In contrast, otherdeposition methods, such as chemical vapor deposition or spin coating,are conformal and require an etch bath or chemical mechanicalplanarization to achieve a desired planar surface.

For extrusion coating, the desired material may be applied in the formof a solution gel or liquid film. For liquid films applied by extrusioncoating, application of the film may be followed by other processing,such as thermal or photochemical steps, in which the uniformity achievedthrough deposition is maintained. During these subsequent process steps,the chemical or physical structures of the film or underlying layers orinterfaces may change, that is, these steps have a curing effect.

Experimental testing with extrusion coating has indicated that surfacefeatures may be coated and planarized to less than 250 angstroms. Thesame features covered by a spin coating typically result innonplanarities of approximately 1800 angstroms.

FIG. 3 illustrates an etch back of insulating layer 31 to expose pillar21. The etch may be either a wet or dry etch, such as a wet chemical ordry plasma etch. The etching is performed for a duration sufficient toexpose at least the top surface of pillar 21.

FIG. 4 illustrates the removal of pillar 21. This may be achieved with arelatively gentle etch, such as a gentle plasma etch. This type ofplasma etch is commonly called an ash process, but other selectiveisotropic etches may be used, if suitable for removing the material fromwhich pillar 21 is made may be used. The avoidance of anisotropicetching eliminates etch residue issues. After the sacrificial structure,that is, pillar 21, has been removed, a via 51 is formed in layer 31 andextends to metal line 22.

OTHER EMBODIMENTS

Although the present invention has been described in detail, it shouldbe understood that various changes, substitutions, and alterations canbe made hereto without departing from the spirit and scope of theinvention as defined by the appended claims.

1. (canceled)
 2. A method of providing a planarized layer of anintegrated circuit, comprising: depositing a layer as a liquid film bymeans of extrusion; forming a recess in the layer; and forming aconductor within the recess in the layer. 3-7. (canceled)
 8. The methodof claim 2 and further comprising curing the liquid film by performing athermal step.
 9. The method of claim 2 and further comprising curing theliquid film by performing a photochemical step.
 10. The method of claim2 wherein the substantially planar surface is planarized to less than250 angstroms.
 11. The method of claim 2 wherein forming a recess in thelayer comprises removing a sacrificial material.
 12. A method of forminga conductive region in an integrated circuit, the method comprising:providing a semiconductor substrate with a conductive region formedthereon; forming a sacrificial material over the conductive region;forming an insulating layer over the sacrificial material by coating thesubstrate using an extrusion coating process; removing the sacrificialmaterial such that a recess is formed in the insulating layer; andforming a conductive material in the recess.
 13. The method of claim 12wherein the sacrificial material comprises photoresist.
 14. The methodof claim 12 wherein the sacrificial material is shaped in a pillar likestructure.
 15. The method of claim 12 wherein coating the substratecomprises applying a liquid film.
 16. The method of claim 15 and furthercomprising curing the liquid film.
 17. The method of claim 16 whereincuring the liquid film comprises performing a thermal step.
 18. Themethod of claim 16 wherein curing the liquid film comprises performing aphotoelectric step.
 19. The method of claim 12 wherein coating thesubstrate comprises applying a solution gel.
 20. The method of claim 12wherein forming an insulating layer comprises forming a layer that isplanarized to less than 250 angstroms.
 21. The method of claim 12 andfurther comprising etching back the insulating layer to expose a topsurface of the sacrificial material.
 22. The method of claim 12 whereinremoving the sacrificial material comprises performing an ash process.23. The method of claim 12 wherein removing the sacrificial materialcomprises performing an isotropic etch.
 24. The method of claim 12wherein forming a conductive material comprises forming a via inelectrical contact with the conductive region.